NS NDS332P

P 通道20 V1A（Ta）1V @ 250µA500mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

• Load Switching• DC/DC converter• Battery protection• Power management control• DC motor control

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
20 V Drain to Source Voltage (Vdss)
1A (Ta) Current - Continuous Drain (Id) @ 25°C
2.7V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
300mOhm @ 1.1A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
5 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±8V Vgs (Max)
195 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
500mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type